mt110c18t1 document number: s-m0037 www. apt-semi .com rev.1.0, may.31, 2013 1 module type maximum ratings thermal characteristics thyristor module v rrm / v drm 800 to 1800v i tav 110a features y international standard package y high surge capability y glass passivated chip y simple mounting y heat transfer through aluminum oxide dbc ceramic isolated metal baseplate y ul recognized applied for file no. e360040 type v rrm v rsm mt110c08t1 mt110c12t1 MT110C16T1 mt110c18t1 800v 1200v 1600v 1800v 900v 1300v 1700v 1900v symbol conditions values units i tav sine 180 o ;tc=85 110 a i tsm t vj =45 t=10ms, sine t vj =125 t=10ms, sine 2250 1900 a i 2 t t vj =45 t=10ms, sine t vj =125 t=10ms, sine 25000 18000 a 2 s visol a.c.50hz;r.m.s.;1min 3000 v tvj -40 to 130 tstg -40 to 125 mt to terminals(m5) 3 15% nm ms to heatsink(m6) 5 15% nm di/dt t vj = t vjm , 2/3v drm ,i g =500ma tr<0.5us,tp>6us 150 a/us dv/dt t j = t vjm ,2/3v drm , linear voltage rise 1000 v/us a maximum allowable acceleration 50 m/s 2 weight module(approximately) 100 g symbol conditions values units rth(j-c) cont.;per thyristor / per module 0.28/0.14 /w rth(c-s) per thyristor / per module 0.2/0.1 /w circuit applications y power converters y lighting control y dc motor control and drives y heat and temperature control
mt110c18t1 document number: s-m0037 www. apt-semi .com rev.1.0, may.31, 2013 2 electrical characteristics symbol conditions values units min. typ. max. v tm t=25 i tm =300a 1.65 v i rrm /i drm t vj =t vjm ,v r =v rrm ,v d =v drm 20 ma v to for power-loss calculations only (t vj =125 ) 0.9 v r t t vj =t vjm 2 m ? v gt t vj =25 , v d =6v 3 v i gt t vj =25 , v d =6v 150 ma v gd t vj =125 , v d =2/3v drm 0.25 v i gd t vj =125 , v d =2/3v drm 6 ma i l t vj =25 , r g = 33 ? 300 600 ma i h t vj =25 , v d =6v 150 250 ma tgd t vj =25 , i g =1a, di g /dt=1a/us 1 us tq t vj =t vjm 100 us
mt110c18t1 document number: s-m0037 www. apt-semi .com rev.1.0, may.31, 2013 3 performance curves fi g 1. power dissi p ation fig2.forward current derating curve 0 i tav 50 100 a 150 200 w 150 100 50 p tav 0 rec.30 rec.60 rec.120 sin.180 dc fig3. transient thermal impedance fig4. max non-repetitive forward surge current fig5. forward characteristics 0.001 t 0.01 0.1 1 10 s 100 0.50 / w 0.25 0 z th(j- c ) z th(j- s ) 10 100 ms 1000 50hz 2500 a 1250 0 0 v tm 0.5 1.0 1.5 v 2.0 300 a 200 100 i t 0 max . typ . dc sin.180 rec.120 rec.60 rec.30 i tavm 200 a 160 120 80 40 0 0 tc 50 100 130 25 - - - 125
mt110c18t1 document number: s-m0037 www. apt-semi .com rev.1.0, may.31, 2013 4 package outline information case: t1 dimensions in mm fig6. gate trigger characteristics 1/2 mt110c18t1 v gd125 i gd125 i gt v gt 20v;20 ? pg(tp) 0.001 i g 0.01 0.1 1 10 a 100 100 v 10 1 v g 0.1 -40 25 125 t vj
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